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IIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII II I II I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I I II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII
* High DC Current Gain -- Min hFE = 1000 @ IC = 5 A, VCE = 4 V * Collector-Emitter Sustaining Voltage -- @ 30 mA VCEO(sus) = 60 Vdc (Min) -- TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) -- TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) -- TIP142, TIP147 * Monolithic Construction with Built-In Base-Emitter Shunt Resistor
(1) 5 ms,
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
. . . designed for general-purpose amplifier and low frequency switching applications.
Darlington Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Case to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Device Dissipation @ TC = 25_C
Base Current -- Continuous
Collector Current -- Continuous Peak (1)
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
v 10% Duty Cycle.
Rating
Characteristic
BASE
NPN TIP140 TIP141 TIP142
8.0 k
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
40
IC
IB
COLLECTOR
EMITTER
DARLINGTON SCHEMATICS
Symbol
TIP140 TIP145
RJC
RJA
60
60
- 65 to + 150
TIP141 TIP146
125
0.5
5.0
80
80
10 15
BASE
PNP TIP145 TIP146 TIP147
35.7
Max
1.0
TIP142 TIP147
100
100
8.0 k
_C/W
_C/W
Watts
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
40
COLLECTOR
EMITTER
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 125 WATTS
*Motorola Preferred Device
TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147*
CASE 340D-01
Order this document by TIP140/D
NPN
1
t, TIME ( s)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle SWITCHING CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
V2 approx +12 V
V1 appox. - 8.0 V
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (See Figure 1)
Base-Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc)
Base-Emitter Saturation Voltage (IC = 10 A, IB = 40 mA)
Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA)
DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V)
Emitter Cutoff Current (VBE = 5.0 V)
Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0)
2
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA TUT
tr, tf 10 ns DUTY CYCLE = 1.0% 0
Figure 1. Switching Times Test Circuit
For NPN test circuit reverse diode and voltage polarities.
25 s
(VCC = 30 V, IC = 5.0 A, IB = 20 mA, Duty Cycle 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C)
51
for td and tr, D1 is disconnected and V2 = 0
Characteristic
RB
D1
+ 4.0 V
8.0 k
v
v 2.0%.
40
VCC - 30 V
TIP140, TIP145 TIP141, TIP146 TIP142, TIP147
TIP140, TIP145 TIP141, TIP146 TIP142, TIP147
TIP140, TIP145 TIP141, TIP146 TIP142, TIP147
SCOPE
0.1 0.2
0.2
0.5
1.0
2.0
5.0
10
VCEO(sus)
VCE(sat)
ts
VBE(sat)
VBE(on)
Symbol
Motorola Bipolar Power Transistor Device Data
ICBO ICEO IEBO hFE td ts tr tf 0.5
Figure 2. Switching Times
1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 1000 500 Min 60 80 100 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- tf td @ VBE(off) = 0 0.55 0.15 Typ 2.5 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- tr Max 3.0 3.5 2.0 3.0 20 1.0 1.0 1.0 2.0 2.0 2.0 -- -- -- -- -- -- -- -- -- PNP NPN VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C Unit Vdc Vdc Vdc Vdc mA mA mA s s s s -- 10 20
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
TYPICAL CHARACTERISTICS
NPN TIP140, TIP141, TIP142
20,000 5000 hFE , DC CURRENT GAIN TJ = 150C hFE , DC CURRENT GAIN 100C 25C - 55C 1000 10,000 7000 5000 3000 2000 VCE = 4.0 V 7.0 10 1000 0.5 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 - 55C TJ = 150C 100C 25C
PNP TIP145, TIP146, TIP147
2000
500 300 0.5
VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
5.0
5.0
3.0 2.0
3.0 2.0 IC = 10 A, IB = 4.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 - 75 - 50 - 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175
IC = 5.0 A, IB = 10 mA 1.0 0.7 0.5 - 75 - 50 - 25 IC = 1.0 A, IB = 2.0 mA
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C)
150
175
Figure 4. Collector-Emitter Saturation Voltage
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 - 75 - 25 25 75 125 IC = 10 A 5.0 A 1.0 A 175 VCE = 4.0 V
4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 1.2 0.8 - 75 - 25 25 75 125 5.0 A 1.0 A 175 VCE = 4.0 V
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Base-Emitter Voltage
Motorola Bipolar Power Transistor Device Data
3
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ACTIVE-REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
20 IC, COLLECTOR CURRENT (AMP) (mA) 10 7.0 5.0 3.0 2.0 1.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C TIP140, 145 TIP141, 146 TIP142, 147 20 30 50 15 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 15 10 7.0 5.0 100 mJ
The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2.0
0.2 10
1.0 100 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 50 100
Figure 6. Active-Region Safe Operating Area
VCE MONITOR MPS-U52 RBB1 INPUT 50 50 1.5 k RBB2 = 100 VBB2 = 0 VBB1 = 10 V 100 mH TUT VCC = 20 V IC MONITOR RS = 0.1
Figure 7. Unclamped Inductive Load
w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0
INPUT VOLTAGE COLLECTOR CURRENT 1.42 A VCE(sat) - 20 V COLLECTOR VOLTAGE V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO 100 70 50 PNP 20 10 7.0 5.0 NPN PNP NPN 5.0 PD, POWER DISSIPATION (WATTS) 10 VCE = 10 V IC = 1.0 A TJ = 25C
4.0
3.0
2.0
2.0 1.0 1.0
1.0 0
2.0
3.0 5.0 f, FREQUENCY (MHz)
7.0
0
40
80 120 160 TA, FREE-AIR TEMPERATURE (C)
200
Figure 9. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 4
Figure 10. Free-Air Temperature Power Derating
Motorola Bipolar Power Transistor Device Data
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
U S K L
1 2
4
A
3
DIM A B C D E G H J K L Q S U V
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
CASE 340D-01 TO-218AC ISSUE A
Motorola Bipolar Power Transistor Device Data
5
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
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6
Motorola Bipolar Power Transistor Device Data
*TIP140/D*
TIP140/D

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